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參數(shù)資料
| 型號： | 935263448518 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | SPEAKER PHONE CIRCUIT, PQFP44 |
| 封裝： | PLASTIC, SOT-307, QFP-44 |
| 文件頁數(shù)： | 16/43頁 |
| 文件大?。?/td> | 237K |
| 代理商： | 935263448518 |
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1999 Oct 14
23
Philips Semiconductors
Product specication
Speech and handsfree IC
TEA1098
IBB(PD)
current consumption on VBB
during power-down phase
PD = LOW
460
A
Preamplier inputs (pins MIC+, MIC
, IR, DTMF, TXIN, HFTX and HFRX)
Zi(MIC)
input impedance
differential between pins
MIC+ and MIC
70
k
single-ended between pins
MIC+/MIC
and GNDTX
35
k
Z
i(IR)
input impedance between pins
IR and LN
20
k
Z
i(DTMF)
input impedance between pins
DTMF and GND
20
k
Z
i(TXIN)
input impedance between pins
TXIN and GNDTX
20
k
Z
i(HFTX)
input impedance between pins
HFTX and GND
20
k
Zi(HFRX)
input impedance between pins
HFRX and GND
20
k
TX ampliers
TX HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC
AND LN)
Gv(MIC-LN)
voltage gain from pin
MIC+/MIC
to LN
VMIC = 5 mV (RMS)
43.3
44.3
45.3
dB
Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
±0.25
dB
G
v(T)
gain variation with temperature
referenced to 25
°C
Tamb = 25 to +75 °C
±0.25
dB
CMRR
common mode rejection ratio
80
dB
THD
total harmonic distortion at LN
VLN = 1.4 V (RMS)
2%
Iline = 4 mA;
VLN = 0.12 V (RMS)
10
%
Vno(LN)
noise output voltage at pin LN;
pins MIC+/MIC
shorted
through 200
psophometrically weighted
(p53 curve)
77.5
dBmp
G
v(mute)
gain reduction if not activated
see Table 2
60
80
dB
DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
Gv(DTMF-LN)
voltage gain from pin
DTMF to LN
VDTMF = 50 mV (RMS)
24.35 25.35
26.35
dB
G
v(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
±0.25
dB
Gv(T)
gain variation with temperature
referenced to 25
°C
Tamb = 25 to +75 °C
±0.25
dB
G
v(mute)
gain reduction if not activated
see Table 2
60
80
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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