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參數(shù)資料
| 型號： | 934056931115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 0.8 A, 200 V, SCR |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 129K |
| 代理商： | 934056931115 |
July 2001
3
Rev 1.000
Philips Semiconductors
Product specication
Thyristor logic level
MCR08BT1
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance
-
15
K/W
junction to solder point
R
th j-a
Thermal resistance
pcb mounted, minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted; pad area as in fig:14
-
70
-
K/W
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D = 12 V; IT = 10 mA; gate open circuit
-
50
200
A
I
L
Latching current
V
D = 12 V; IGT = 0.5 mA; RGK = 1 k
-2
6
mA
I
H
Holding current
V
D = 12 V; IGT = 0.5 mA; RGK = 1 k
-2
5
mA
V
T
On-state voltage
I
T = 2 A
-
1.35
1.5
V
GT
Gate trigger voltage
V
D = 12 V; IT = 10 mA; gate open circuit
-
0.5
0.8
V
D = VDRM(max); IT = 10 mA; Tj = 125 C;
0.2
0.3
-
V
gate open circuit
I
D, IR
Off-state leakage current
V
D = VDRM(max); VR = VRRM(max); Tj = 125 C;
-
0.05
0.1
mA
R
GK = 1 k
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM =67% VDRM(max); Tj = 125 C;
-
25
-
V/
s
off-state voltage
exponential waveform; R
GK = 1k
t
gt
Gate controlled turn-on
I
TM = 2 A; VD = VDRM(max); IG = 10 mA;
-
2
-
s
time
dI
G/dt = 0.1 A/s
t
q
Circuit commutated
V
D = 67% VDRM(max); Tj = 125 C;
-
100
-
s
turn-off time
I
TM = 1.6 A; VR = 35 V; dITM/dt = 30 A/s;
dV
D/dt = 2 V/s; RGK = 1 k
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