- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42380 > 934056931115 (NXP SEMICONDUCTORS) 0.8 A, 200 V, SCR PDF資料下載
參數(shù)資料
| 型號(hào)： | 934056931115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 0.8 A, 200 V, SCR |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 129K |
| 代理商： | 934056931115 |
July 2001
2
Rev 1.000
Philips Semiconductors
Product specication
Thyristor logic level
MCR08BT1
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate thyristor in a plastic
SYMBOL
PARAMETER
MAX.
UNIT
envelope, suitable
for
surface
mounting,
intended for use in general purpose switching
and phase control applications. This device is
V
DRM, VRRM
Repetitive peak
intended
to
be
interfaced
directly
to
off-state voltages
200
V
microcontrollers, logic integrated circuits and
I
T(AV)
Average on-state
other low power gate trigger circuits.
current
0.5
A
I
T(RMS)
RMS on-state current
0.8
A
I
TSM
Non-repetitive peak
9
A
on-state current
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DRM, VRRM
Repetitive peak off-state
-
200
1
V
voltages
I
T(AV)
Average on-state current
half sine wave;
-
0.5
A
T
sp ≤ 112 C
I
T(RMS)
RMS on-state current
all conduction angles
-
0.8
A
I
TSM
Non-repetitive peak
half sine wave;
on-state current
T
j = 25 C prior to surge
t = 10 ms
-
8
A
t = 8.3 ms
-
9
A
I
2tI2t for fusing
t = 10 ms
-
0.32
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 2 A; IG = 10 mA;
-
50
A/
s
on-state current after
dI
G/dt = 100 mA/s
triggering
I
GM
Peak gate current
-
1
A
V
GM
Peak gate voltage
-
5
V
RGM
Peak reverse gate voltage
-
5
V
P
GM
Peak gate power
-
2
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.1
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
ak
g
4
1
23
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934056984115 | 24 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 934056983115 | 24 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 934056985115 | 24 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 934057001127 | 4 A, 400 V, SCR, TO-126 |
| 934057002127 | 4 A, 400 V, SCR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
| 934057052116 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052126 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052412 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。