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參數(shù)資料
| 型號(hào)： | 934056845115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 1.3 A BUF OR INV BASED PRPHL DRVR, PDSO4 |
| 封裝： | PLASTIC, SC-73, SOT-223, 4 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 934056845115 |
Philips Semiconductors
Product specification
PowerMOS transistor
PIP3103-T
Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Continuous drain source voltage
1
-
50
V
I
D
Continuous drain current
2
-
self limiting
A
I
Continuous input current
clamping
-
3
mA
I
IRM
Non-repetitive peak input current
t
p ≤ 1 ms
-
10
mA
P
D
Total power dissipation
T
a = 25C
-
1.8
W
T
stg
Storage temperature
-
-55
150
C
T
j
Continuous junction temperature
normal operation
3
-
150
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
DSM
Non-repetitive clamping energy
T
a ≤ 25C; IDM < ID(lim);
-
100
mJ
inductive load
E
DRM
Repetitive clamping energy
T
sp ≤ 125C; IDM = 50 mA;
-
5
mJ
f = 250 Hz
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from short circuit loads.
Overload protection operates by means of drain current limiting and activating the overtemperature protection.
SYMBOL
PARAMETER
REQUIRED CONDITION
MIN.
MAX.
UNIT
V
DDP
Protected drain source supply voltage
V
IS ≥ 4 V
-
35
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-sp
Junction to solder point
-
12
18
K/W
R
th j-b
Junction to board
4
Mounted on any PCB
-
40
-
K/W
R
th j-a
Junction to ambient
Mounted on PCB of fig. 22
-
70
K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 Refer to OVERLOAD PROTECTION CHARACTERISTICS.
3 Not in an overload condition with drain current limiting.
4 Temperature measured 1.3 mm from tab.
June 2001
2
Rev 1.000
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