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參數(shù)資料
| 型號： | 934056695118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 14/15頁 |
| 文件大?。?/td> | 338K |
| 代理商： | 934056695118 |
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
8 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03ne63
0
50
100
150
02
46
VGS (V)
ID
(A)
Tj = 175
oC
Tj = 25
oC
03ne61
0
2
4
6
8
10
0
30
60
90
120
QG (nC)
VGS
(V)
VDD = 32 V
VDD = 14 V
03ne60
0
50
100
150
200
0.0
0.5
1.0
1.5
VSD (V)
IS
(A)
Tj = 175
oC
Tj = 25
oC
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