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參數(shù)資料
| 型號(hào)： | 934056695118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 338K |
| 代理商： | 934056695118 |
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
6 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 40 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
96
ns
Qr
recovered charge
224
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ne65
0
50
100
150
200
250
300
350
400
450
02468
10
VDS (V)
ID
(A)
4.5
5.5
6.5
7.5
VGS (V) =
20
12
10
8.5
9
03ne64
3
4
5
6
510
15
20
VGS (V)
RDSon
(m
)
03ne66
0
2
4
6
8
10
0
50
100
150
200
250
300
350
400
ID (A)
RDSon
(m
)
VGS (V) =
10
9
8
7
6
03aa27
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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