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參數(shù)資料
| 型號(hào)： | 934056691115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, CMPAK-4 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | 934056691115 |
2001 Nov 08
3
Philips Semiconductors
Preliminary specification
NPN SiGe wideband transistor
BFU510
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
9V
VCEO
collector-emitter voltage
open base
2.3
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
collector current (DC)
15
mA
Ptot
total power dissipation
Ts ≤ 115 °C; note 1; see Fig.2
35
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
1000
K/W
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Notes
1.
Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax =MSG.
2.
ZS and ZL are optimized for gain.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC =2.5 A; IE =0
9
V
V(BR)CEO
collector-emitter breakdown voltage
IC =1 mA; IB =0
2.3
V
V(BR)EBO
emitter-base breakdown voltage
IE =2.5 A; IC =0
2.5
V
ICBO
collector-base leakage current
IE =0; VCB =4.5 V
15
nA
hFE
DC current gain
IC =10 mA; VCE = 2 V
70
140
210
Cc
collector capacitance
IE =ie =0; VCB =2 V; f=1 MHz
150
fF
Cre
feedback capacitance
IC =0; VCB =2V; f = 1 MHz
25
fF
Gmax
maximum power gain; note 1
IC =10 mA; VCE =2V; f=2GHz;
Tamb =25 °C
23
dB
NF
noise figure
IC = 0.5 mA; VCE =2V; f=2GHz;
Γ
S = Γopt
1.0
dB
PL1
output power at 1 dB gain
compression
Ic =5mA; VCE = 2 V; f = 2 GHz;
ZS =ZS opt; ZL =ZL opt; note 2
2
dBm
ITO
third order intercept point
Ic =10mA; VCE = 2 V; f = 2 GHz;
ZS =ZS opt; ZL =ZL opt; note 2
7
dBm
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