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參數(shù)資料
| 型號(hào)： | 934056691115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, CMPAK-4 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | 934056691115 |
2001 Nov 08
2
Philips Semiconductors
Preliminary specification
NPN SiGe wideband transistor
BFU510
FEATURES
Very high power gain
Very low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance
45 GHz SiGe process.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Pagers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
NPN SiGe wideband transistor for low voltage applications
in a plastic, 4-pin dual-emitter SOT343R package.
PINNING
PIN
DESCRIPTION
1
emitter
2base
3
emitter
4
collector
Fig.1 Simplified outline SOT343R.
Marking code: A5
handbook, halfpage
Top view
MSB842
21
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
9V
VCEO
collector-emitter voltage open base
2.3
V
IC
collector current (DC)
10
15
mA
Ptot
total power dissipation
Ts ≤ 115 °C
35
mW
hFE
DC current gain
IC =10mA; VCE =2 V; Tj =25 °C
70
140
210
Gmax
maximum power gain
IC =10mA; VCE = 2 V; f = 2 GHz; Tamb =25 °C
23
dB
NF
noise figure
IC =0.5 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt
1.0
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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