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參數(shù)資料
| 型號： | 934056647127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 251K |
| 代理商： | 934056647127 |
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 07 March 2001
6 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID × RDSon
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
160
140
120
100
80
60
40
20
0
ID
(A)
0
246
8
10
VDS (V)
VGS = 4.5 V
5.0 V
5.5 V
6.0 V
6.5 V
7.0 V
8.0 V
10 V
18 V
003aaa071
Tj = 175
o
C
Tj = 25
o
C
1
0
2
3
456
7
VGS (V)
100
90
80
70
60
50
40
30
20
10
0
ID
(A)
003aaa074
25
23
21
19
17
15
13
11
9
7
5
25
45
65
85
105
125
6.0 V
6.5 V
VGS = 5.5 V
7.0 V
10.0 V
9.0 V
8.0 V
7.5 V
RDSon
(m
)
ID (A)
003aaa072
0
-40
-80
40
80
120
160
200
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj (
o
C)
a
003aaa076
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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