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參數(shù)資料
| 型號(hào)： | 934056647127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 251K |
| 代理商： | 934056647127 |
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 07 March 2001
5 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 250 A; VGS =0V
55
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
2.0
3.0
4.0
V
Tj = 175 °C
1.0
V
IDSS
drain-source leakage current
VGS =0V; VDS =55V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VDS =0V; VGS = ±20 V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Tj =25 oC
7.2
8.0
m
Tj = 175 °C
16
m
Dynamic characteristics
Qg(tot)
total gate charge
ID = 50 A; VDD =44V;
87
nC
Qgs
gate-source charge
24
nC
Qgd
gate-drain (Miller) charge
29
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 13
3264
4352
pF
Coss
output capacitance
720
863
pF
Crss
reverse transfer capacitance
389
533
pF
td(on)
turn-on delay time
VDD = 30 V; RD = 1.2 ;
VGS =5V; RG =10
24
36
ns
tr
rise time
94
141
ns
td(off)
turn-off delay time
100
140
ns
tf
fall time
80
112
ns
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =75A;
dIS/dt = 100 A/s;
VGS = -10 V; VR =30V
65
ns
Qr
recovered charge
0.17
C
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