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參數(shù)資料
| 型號： | 934056605215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, 3 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 934056605215 |
2002 Aug 08
4
Philips Semiconductors
Product specication
50 V low VCEsat PNP transistor
PBSS5350T
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current VCB = 50 V; IE =0
100
nA
VCB = 50 V; IE = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB = 5 V; IC =0
100
nA
hFE
DC current gain
VCE = 2 V; IC = 100 mA
200
VCE = 2 V; IC = 500 mA
200
VCE = 2 V; IC = 1 A; note 1
200
VCE = 2 V; IC = 2 A; note 1
130
VCE = 2 V; IC = 3 A; note 1
80
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB = 50 mA
90
mV
IC = 1 A; IB = 50 mA
180
mV
IC = 2 A; IB = 100 mA; note 1
320
mV
IC = 2 A; IB = 200 mA; note 1
270
mV
IC = 3 A; IB = 300 mA; note 1
390
mV
RCEsat
equivalent on-resistance
IC = 2 A; IB = 200 mA; note 1
90
135
m
VBEsat
base-emitter saturation
voltage
IC = 2 A; IB = 100 mA; note 1
1.1
V
IC = 3 A; IB = 300 mA; note 1
1.2
V
VBEon
base-emitter turn-on voltage
VCE = 2 V; IC = 1 A; note 1
1.2
V
fT
transition frequency
IC = 100 mA; VCE = 5V;
f = 100 MHz
100
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0; f = 1 MHz
35
pF
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