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參數(shù)資料
| 型號： | 934056605215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 76K |
| 代理商： | 934056605215 |
2002 Aug 08
2
Philips Semiconductors
Product specication
50 V low VCEsat PNP transistor
PBSS5350T
FEATURES
Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation.
APPLICATIONS
Power management applications
Low and medium power DC/DC convertors
Supply line switching
Battery chargers
Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4350T.
MARKING
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
= w: Made in China.
TYPE NUMBER
MARKING CODE(1)
PBSS5350T
ZD
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
Fig.1
Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
50
V
IC
collector current (DC)
2A
ICRP
repetitive peak collector
current
3A
RCEsat
equivalent on-resistance
135
m
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