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參數(shù)資料
| 型號(hào)： | 934056601115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, SC-89, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 42K |
| 代理商： | 934056601115 |
2001 Jul 13
3
Philips Semiconductors
Product specication
40 V low VCEsat PNP transistor
PBSS3540F
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 ms; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 40 V; IE =0
100
nA
VCB = 40 V; IE = 0; Tj = 150 °C
50
A
IBEO
emitter-base cut-off current
VEB = 5 V; IC =0
100
nA
hFE
DC current gain
VCE = 2V
IC = 10 mA
200
IC = 100 mA; note 1
150
IC = 500 mA; note 1
40
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
50
mV
IC = 100 mA; IB = 5mA
130
mV
IC = 200 mA; IB = 10 mA
200
mV
IC = 500 A; IB = 50 mA; note 1
350
mV
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
440
<700
m
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 50 mA; note 1 1.2
V
VBEon
base-emitter turn-on voltage
VCE = 2 V; IC = 100 mA; note 1
1.1
V
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0; f = 1 MHz
10
pF
fT
transition frequency
IC = 100 mA; VCE = 5V;
f = 100 MHz
100
300
MHz
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