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參數(shù)資料
| 型號： | 934056601115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, SC-89, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 934056601115 |
2001 Jul 13
2
Philips Semiconductors
Product specication
40 V low VCEsat PNP transistor
PBSS3540F
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved thermal behaviour due to flat leads
Enhanced performance over SOT23 general purpose
transistors.
APPLICATIONS
General purpose switching and muting
Low frequency driver circuits
Audio frequency general purpose applications
Battery driven equipment (mobile phones, video
cameras, hand-held devices).
DESCRIPTION
PNP low VCEsat transistor in a SC-89 (SOT490) plastic
package.
NPN complement: PBSS2540F.
MARKING
TYPE NUMBER
MARKING CODE
PBSS3540F
2D
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
MAM411
1
2
3
12
Top view
3
Fig.1
Simplified outline (SC-89; SOT490) and
symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
ICM
peak collector current
1A
RCEsat
equivalent on-resistance
<700
m
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
6V
IC
collector current (DC)
500
mA
ICM
peak collector current
1A
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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