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參數(shù)資料
| 型號(hào)： | 934056252118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 33 A, 100 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大?。?/td> | 291K |
| 代理商： | 934056252118 |
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Philips Semiconductors
BUK9240-100A
TrenchMOS logic level FET
Product specication
Rev. 01 — 03 October 2000
5 of 13
9397 750 07573
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
100
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Figure 9
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25A;
Figure 7 and 8
Tj =25 °C
34
40
m
Tj = 175 °C
100
m
VGS = 4.5 V; ID =25A;
Tj =25 °C
44.6
m
VGS =10V; ID =25 A;
Tj =25°C
33
38.6
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
2304
3072
pF
Coss
output capacitance
222
266.4
pF
Crss
reverse transfer capacitance
151
207
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
20
ns
tr
rise time
135
ns
td(off)
turn-off delay time
125
ns
tf
fall time
90
ns
Ld
internal drain inductance
measured from drain lead
from package to centre of
die
2.5
nH
Ls
internal source inductance
measured from source lead
from package to source
bond pad
7.5
nH
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