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參數(shù)資料
| 型號： | 934056252118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 33 A, 100 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 291K |
| 代理商： | 934056252118 |
Philips Semiconductors
BUK9240-100A
TrenchMOS logic level FET
Product specication
Rev. 01 — 03 October 2000
6 of 13
9397 750 07573
Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS =25A;VGS =0V;
Figure 15
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
60
ns
Qr
recovered charge
240
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
On-state resistance: typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03na66
0
20
40
60
80
100
120
024
68
10
VDS(V)
ID(A)
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
5.0
VGS= 10 (V)
03na64
26
28
30
32
34
36
38
3456
789
10
VGS(V)
RDSon
(mOhm)
03na67
20
25
30
35
40
45
50
10
20
30
40
50
60
70
ID(A)
VGS= 3.0 (V)
3.2
3.4
3.6
4.0
5.0
RDSon
(mOhm)
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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