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參數(shù)資料
| 型號： | 934056250118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 55 V, 0.155 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 273K |
| 代理商： | 934056250118 |
Philips Semiconductors
BUK95/9640-100A
TrenchMOS logic level FET
Product data
Rev. 03 — 08 February 2002
7 of 14
9397 750 09162
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (C)
VGS(th)
(V)
min
typ
max
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0123
VGS (V)
ID
(A)
min
typ
max
03na65
0
20
40
60
80
0
1020
3040
ID (A)
gfs
(S)
03na68
0
1000
2000
3000
4000
5000
6000
10-2
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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