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參數(shù)資料
| 型號(hào)： | 934056250118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 55 V, 0.155 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 273K |
| 代理商： | 934056250118 |
Philips Semiconductors
BUK92150-55A
TrenchMOS logic level FET
Product data
Rev. 03 — 30 May 2002
2 of 13
9397 750 09725
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-
11
A
Ptot
total power dissipation
Tmb =25 °C
-
36
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =5V; ID = 5 A
120
140
m
Tj =25 °C; VGS = 4.5 V; ID = 5 A
-
155
m
Tj =25 °C; VGS = 10 V; ID = 5 A
97
125
m
Tj = 175 °C; VGS =5V; ID = 5 A
-
280
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
-55
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
-11
A
-
7.8
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
-44
A
Ptot
total power dissipation
-36
W
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
-
11
A
IDRM
peak reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
44
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =11A;
VDS ≤ 55 V; VGS =5V; RGS =50 ;
starting Tj =25 °C
-16
mJ
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