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參數(shù)資料
| 型號： | 934056194135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 284K |
| 代理商： | 934056194135 |
Philips Semiconductors
BUK78150-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 30 January 2001
5 of 13
9397 750 07738
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
V
Tj = 55 °C50
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C2
3
4
V
Tj = 150 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS = 55 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 150 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =5A;
Tj =25 °C
128
150
m
Tj = 150 °C
278
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
170
230
pF
Coss
output capacitance
54
65
pF
Crss
reverse transfer capacitance
37
52
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 2.7 ;
VGS =10V; RG = 5.6
3
ns
tr
rise time
26
ns
td(off)
turn-off delay time
8
ns
tf
fall time
10
ns
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