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參數(shù)資料
| 型號： | 934056194135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 284K |
| 代理商： | 934056194135 |
Philips Semiconductors
BUK78150-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 30 January 2001
2 of 13
9397 750 07738
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
55
V
ID
drain current (DC)
Tsp =25 °C; VGS =10V
5.5
A
Ptot
total power dissipation
Tsp =25 °C
8W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID =5A
Tj =25 °C
128
150
m
Tj = 150 °C
278
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
55
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
5.5
A
3.8
A
IDM
peak drain current
22
A
Ptot
total power dissipation
8W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
IDR
reverse drain current (DC)
Tsp =25 °C
5.5
A
IDRM
pulsed reverse drain current
Tsp =25 °C; pulsed; tp ≤ 10 s
22
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =5A;
VDS ≤ 55 V; VGS = 10 V; RGS =50 ;
starting Tsp =25 °C
25
mJ
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