參數(shù)資料
型號: 934055961135
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, CMPAK-4
文件頁數(shù): 13/16頁
文件大小: 113K
代理商: 934055961135
2000 Mar 29
6
Philips Semiconductors
Product specication
N-channel dual-gate PoLo MOS-FETs
BF1201; BF1201R;
BF1201WR
handbook, halfpage
0
IG1 (A)
10
50
16
12
4
0
8
20
30
40
MCD939
ID
(mA)
Fig.9
Drain current as a function of gate 1 current;
typical values.
VDS = 5 V; VG2-S =4V.
Tj =25 °C.
handbook, halfpage
05
20
0
4
8
12
16
12
3
4
VGG (V)
ID
(mA)
MCD940
Fig.10 Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
VDS = 5 V; VG2-S = 4 V; Tj =25 °C.
RG1 =62k (connected to VGG); see Fig.21.
handbook, halfpage
010
25
0
5
10
15
20
24
6
8
VGG = VDS (V)
ID
(mA)
MCD941
RG1 = 39 k
47 k
56 k
62 k
68 k
82 k
100 k
Fig.11 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
VG2-S = 4 V; Tj =25 °C.
RG1 connected to VGG; see Fig.21.
handbook, halfpage
024
6
VG2-S (V)
ID
(mA)
20
0
16
12
8
4
MCD942
VGG = 5 V
4.5 V
4 V
3.5 V
3 V
VDS = 5 V; Tj =25 °C.
RG1 =62k (connected to VGG); see Fig.21.
Fig.12 Drain current as a function of gate 2
voltage; typical values.
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