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參數(shù)資料
| 型號： | 934055961135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, CMPAK-4 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 113K |
| 代理商： | 934055961135 |
2000 Mar 29
3
Philips Semiconductors
Product specication
N-channel dual-gate PoLo MOS-FETs
BF1201; BF1201R;
BF1201WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
10
V
ID
drain current (DC)
30
mA
IG1
gate 1 current
±10
mA
IG2
gate 2 current
±10
mA
Ptot
total power dissipation
BF1201; BF1201R
Ts ≤ 113 °C; note 1
200
mW
BF1201WR
Ts ≤ 109 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
BF1201; BF1201R
185
K/W
BF1201WR
155
K/W
handbook, halfpage
050
(1)
(2)
Ts (°C)
Ptot
(mW)
100
200
250
0
200
150
100
50
MCD934
Fig.4 Power derating curve.
(1) BF1201WR.
(2) BF1201 and BF1201R.
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