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參數(shù)資料
| 型號(hào)： | 934055936114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 934055936114 |
2000 Feb 01
4
Philips Semiconductors
Product specication
Microwave power transistor
BLS3135-10
handbook, halfpage
0
(1)
(2)
(3)
PL
(W)
0.5
1.5
12
0
4
8
1
PD (W)
MCD856
Fig.2
Load power as a function of drive power;
typical values.
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
handbook, halfpage
04
12
0
4
8
MCD857
(3)
Gp
(dB)
PL (W)
(1)
(2)
Fig.3
Power gain as a function of load power;
typical values.
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
handbook, halfpage
50
04
12
0
8
10
20
30
40
MCD858
ηC
(%)
PL (W)
(2)
(1)
(3)
Fig.4
Collector efficiency as a function of load
power; typical values.
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
handbook, halfpage
3
3.2
3.4
3.6
12
0
4
8
24
0
8
16
MCD859
Gp
(dB)
return
losses
(dB)
Gp
f (GHz)
return
losses
Fig.5
Power gain and input return losses as
functions of frequency; typical values.
VCB = 40 V; class-C; PL = 10 W; tp = 100 s; δ = 10%.
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