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參數(shù)資料
| 型號(hào)： | 934055936114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 66K |
| 代理商： | 934055936114 |
2000 Feb 01
3
Philips Semiconductors
Product specication
Microwave power transistor
BLS3135-10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance at Th =25 °C in a common-base test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
75
V
VCES
collector-emitter voltage
RBE =0
75
V
VEBO
emitter-base voltage
open collector
2V
ICM
peak collector current
tp ≤ 100 s; δ≤ 10%
1.5
A
Ptot
total power dissipation
tp = 100 s; δ = 10%; Th =25 °C
34
W
Tstg
storage temperature
65
+200
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
up to 0.2 mm from ceramic cap; t
≤ 10 s
235
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Zth j-h
thermal impedance from junction to heatsink
tp = 100 s; δ = 10%; note 1
5.2
K/W
tp = 200 s; δ = 10%; note 1
5.8
K/W
tp = 300 s; δ = 10%; note 1
6.3
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 2.5 mA; open emitter
75
V
V(BR)CES
collector-emitter breakdown voltage IC = 2.5 mA; VBE =0
75
V
ICBO
collector leakage current
VCB =40V; IE =0
0.3
mA
ICES
collector leakage current
VCE =40V; VBE =0
0.5
mA
IEBO
emitter leakage current
VEB = 1.5 V; IC =0
0.1
mA
hFE
DC current gain
VCE =5V; IC = 0.25 A
40
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Class-C; tp = 100 s; δ = 10%
3.1 to 3.5
40
≥10
≥7.5
typ. 9
≥35
typ. 40
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