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參數(shù)資料
| 型號： | 934055916135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 153K |
| 代理商： | 934055916135 |
2003 Feb 10
3
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2043
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Rth mb-h = 0.4 K/W, unless otherwise specied.
Ruggedness in class-AB operation
The BLF2043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 2000 MHz at rated load power.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-h
thermal resistance from junction to heatsink
Tmb =25 °C; note 1
9
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.2 mA
65
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID =20mA
4
5V
IDSS
drain-source leakage current
VGS = 0; VDS =26V
1.5
A
IDSX
on-state drain current
VGS =VGSth +9V; VDS =10V
2.8
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
40
nA
gfs
forward transconductance
VDS = 10 V; ID = 0.75 A
0.5
S
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.75 A
1.2
Cis
input capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
11
pF
Cos
output capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
9
pF
Crs
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
0.5
pF
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
CW, class-AB (2-tone)
f1 = 2000; f2 = 2000.1
26
85
10 (PEP)
>11.8
>33
≤26
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