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參數(shù)資料
| 型號： | 934055916135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 153K |
| 代理商： | 934055916135 |
2003 Feb 10
2
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2043
FEATURES
Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 85 mA:
– Output power = 10 W (PEP)
– Gain = 12 dB
– Efficiency = 36.5%
– dim =
32 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (HF to 2200 MHz)
No internal matching for broadband operation.
APPLICATIONS
RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
HF to 2200 MHz frequency range
Broadcast drivers.
DESCRIPTION
10 W LDMOS power transistor for base station
applications at frequencies from HF to 2200 MHz.
PINNING - SOT538A
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to mounting base
2
3
1
Top view
MBK905
Fig.1 Simplified outline.
QUICK REFERENCE DATA
Typical RF performance at Th =25 °C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
dim
(dBc)
CW, class-AB (2-tone)
f1 = 2000; f2 = 2000.1
26
10 (PEP)
12.5
36.5
32
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
75
V
VGS
gate-source voltage
±15
V
ID
drain current (DC)
2.2
A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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