參數(shù)資料
型號(hào): 934055915112
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝: SOT-115J, 7 PIN
文件頁數(shù): 5/8頁
文件大?。?/td> 58K
代理商: 934055915112
2001 Nov 02
5
Philips Semiconductors
Product specication
750 MHz, 20.3 dB gain power doubler amplier
BGD714
handbook, halfpage
200
0
400
800
600
MCD845
f (MHz)
CTB
(dB)
50
60
80
90
70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
(1) Vo.
(2) Typ. +3
σ.
ZS =ZL =75 ; VB = 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
200
0
400
800
600
MCD846
f (MHz)
Xmod
(dB)
50
60
80
90
70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
(1) Vo.
(2) Typ. +3
σ.
ZS =ZL =75 ; VB = 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
200
0
400
800
600
MCD847
f (MHz)
CSO
(dB)
50
60
80
90
70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.4
Composite second order distortion as a
function of frequency under tilted
conditions.
(1) Vo.
(2) Typ. +3
σ.
ZS =ZL =75 ; VB = 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ.
3 σ.
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