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參數(shù)資料
| 型號(hào)： | 934055915112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 58K |
| 代理商： | 934055915112 |
2001 Nov 02
3
Philips Semiconductors
Product specication
750 MHz, 20.3 dB gain power doubler amplier
BGD714
CHARACTERISTICS
Bandwidth 40 to 750 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 45 MHz
20
20.3
20.6
dB
f = 750 MHz
20.8
21.3
21.8
dB
SL
slope straight line
f = 45 to 100 MHz; note 1
0.5
1
1.5
dB
FL
atness straight line
f = 45 to 100 MHz
±0.35 dB
f = 100 to 700 MHz
±0.5
dB
f = 700 to 750 MHz
±0.15 dB
S11
input return losses
f = 45 to 80 MHz
23
dB
f = 80 to 160 MHz
23
dB
f = 160 to 320 MHz
21
dB
f = 320 to 550 MHz
20
dB
f = 550 to 650 MHz
20
dB
f = 650 to 750 MHz
19
dB
f = 750 to 790 MHz
17
dB
S22
output return losses
f = 45 to 80 MHz
23
dB
f = 80 to 160 MHz
23
dB
f = 160 to 320 MHz
20
dB
f = 320 to 550 MHz
20
dB
f = 550 to 650 MHz
20
dB
f = 650 to 750 MHz
19
dB
f = 750 to 790 MHz
17
dB
S21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
112 channels at; Vo = 44 dBmV;
fm = 745.25 MHz
61
dB
79 channels; Vo = 44 dBmV; fm = 547.25 MHz 67
dB
79 channels; fm = 445.25 MHz;
Vo = 49.3 dBmV at 547 MHz; note 2
62
dB
Xmod
cross modulation
112 channels at; Vo = 44 dBmV;
fm = 55.25 MHz
62
dB
79 channels at; Vo = 44 dBmV;
fm = 55.25 MHz
66
dB
79 channels; fm = 745.25 MHz;
Vo = 49.3 dBmV at 547 MHz; note 2
58
dB
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