- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24701 > 934055907118 (NXP SEMICONDUCTORS) 4 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA PDF資料下載
參數(shù)資料
| 型號(hào)： | 934055907118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 934055907118 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM transistor
PHK4NQ10T
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Ta)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Ta); VGS ≥ 10 V
Fig.3. Safe operating area
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-a = f(t); parameter D = tp/T
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS)
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID)
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
Ambient temperature, Ta (C)
0.01
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Transient thermal impedance, Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
Ambient temperature, Ta (C)
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
4.6 V
Tj = 25 C
VGS = 10V
4.8 V
5 V
5.2 V
8 V
4.4 V
5.4 V
6 V
0.01
0.1
1
10
100
0.1
1
10
100
1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
01
23
45
67
89
10
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 10V
Tj = 25 C
6V
8 V
4.8 V
5.2 V
5.4 V
5 V
4.6 V
August 1999
3
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934055908115 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 934055914112 | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 934055915112 | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 934055916135 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 934055916112 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934056255127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube |
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
| 934057052116 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052126 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。