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參數(shù)資料
| 型號(hào)： | 934055907118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | 934055907118 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM transistor
PHK4NQ10T
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low on-state resistance
Fast switching
V
DS = 100 V
Low profile surface mount
package
I
D = 4 A
R
DS(ON) ≤ 70 m (VGS = 10 V)
GENERAL DESCRIPTION
PINNING
SOT96-1 (SO8)
N-channel
enhancement
mode
PIN
DESCRIPTION
field-effect transistor in a plastic
envelope
using
’trench’
1-3
source
technology.
4
gate
Applications:-
Motor and relay drivers
5-8
drain
d.c. to d.c. converters
The PHK4NQ10T is supplied in the
SOT96-1 (SO8) surface mounting
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 150C
-
100
V
DGR
Drain-gate voltage
T
j = 25 C to 150C;
-
100
V
R
GS = 20 k
V
GS
Gate-source voltage
-
± 20
V
I
D
Drain current (t
p ≤ 10 s)
T
a = 25 C
-
4
A
T
a = 70 C
-
3
A
I
DM
Drain current (pulse peak value)
T
a = 25 C
-
16
A
P
tot
Total power dissipation
T
a = 25 C, t ≤ 10 s
-
2.5
W
T
a = 70 C, t ≤ 10 s
-
1.6
W
T
j, Tstg
Operating junction and storage
- 65
150
C
temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-a
Thermal resistance junction
Surface mounted, FR4 board, t
≤ 10 sec
-
50
K/W
to ambient
R
th j-a
Thermal resistance junction
Surface mounted, FR4 board
150
-
K/W
to ambient
d
g
s
12
34
5
6
7
8
pin 1 index
August 1999
1
Rev 1.000
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