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參數(shù)資料
| 型號： | 934055906118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 100 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 78K |
| 代理商： | 934055906118 |
Philips Semiconductors
Product specification
Dual N-channel TrenchMOS
TM transistor
PHKD3NQ10T
ELECTRICAL CHARACTERISTICS
T
j= 25C, per MOSFET unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 250 A;
100
-
V
voltage
T
j = -55C
89
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2
3
4
V
T
j = 150C
1.1
-
V
T
j = -55C
-
6
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 1.5 A
-
70
90
m
resistance
T
j = 150C
-
216
m
I
GSS
Gate source leakage current V
GS = ±20 V; VDS = 0 V
-
10
100
nA
I
DSS
Zero gate voltage drain
V
DS = 100 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 150C
-
100
A
Q
g(tot)
Total gate charge
I
D = 3 A; VDD = 80 V; VGS = 10 V
-
21
-
nC
Q
gs
Gate-source charge
-
2.5
-
nC
Q
gd
Gate-drain (Miller) charge
-
8
-
nC
t
d on
Turn-on delay time
V
DD = 50 V; RD = 15 ;-
6
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5.6
-12
-
ns
t
d off
Turn-off delay time
Resistive load
-
20
-
ns
t
f
Turn-off fall time
-
10
-
ns
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
2.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 20 V; f = 1 MHz
-
633
-
pF
C
oss
Output capacitance
-
103
-
pF
C
rss
Feedback capacitance
-
61
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C, per MOSFET unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source diode
T
a = 25 C, t ≤ 10 s
-
2
A
current
I
SM
Pulsed source diode current
-
12
A
V
SD
Diode forward voltage
I
F = 2 A; VGS = 0 V
-
0.8
1.2
V
t
rr
Reverse recovery time
I
F = 2 A; -dIF/dt = 100 A/s;
-
55
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 25 V
-
135
-
nC
August 1999
2
Rev 1.000
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