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參數(shù)資料
| 型號(hào)： | 934055902127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 25 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | 934055902127 |
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN003-25W
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 100 A;
-
162
mJ
energy
t
p = 100 s; Tj prior to avalanche = 25C;
V
DD ≤ 15 V; RGS = 50 ; VGS = 5 V; refer to
fig:15
I
AS
Non-repetitive avalanche
-
100
A
current
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
0.5
K/W
to mounting base
R
th j-a
Thermal resistance junction
in free air
-
45
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
25
-
V
voltage
T
j = -55C
23
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
1.5
2
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
2.8
3.2
m
resistance
V
GS = 5 V; ID = 25 A
-
3.1
3.5
m
V
GS = 4.5 V; ID = 25 A
-
3.3
4.0
m
V
GS = 5 V; ID = 25 A; Tj = 175C
-
4.8
6.5
m
I
GSS
Gate-source leakage current V
GS = ±5 V; VDS = 0 V;
-
0.02
100
nA
I
DSS
Zero gate voltage drain
V
DS = 25 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 175C
-
500
A
Q
g(tot)
Total gate charge
I
D = 100 A; VDD = 15 V; VGS = 5 V
-
219
-
nC
Q
gs
Gate-source charge
-
30
-
nC
Q
gd
Gate-drain (Miller) charge
-
113
-
nC
t
d on
Turn-on delay time
V
DD = 15 V; RD = 0.6 ;
-
28
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5.6
-
133
-
ns
t
d off
Turn-off delay time
Resistive load
-
716
-
ns
t
f
Turn-off fall time
-
424
-
ns
L
d
Internal drain inductance
Measured tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 20 V; f = 1 MHz
-
12.6
-
nF
C
oss
Output capacitance
-
3500
-
pF
C
rss
Feedback capacitance
-
2400
-
pF
October 1999
2
Rev 1.100
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