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參數(shù)資料
| 型號(hào)： | 934055876135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | 934055876135 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHT6NQ10T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
2
4
6
8
1012
1416
1820
2224
2628
30
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 6A
Tj = 25 C
VDD = 20 V
VDD = 80 V
0
1
2
3
4
5
6
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
August 1999
5
Rev 1.000
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