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參數(shù)資料
| 型號(hào)： | 934055876135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | 934055876135 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHT6NQ10T
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
100
-
V
voltage
T
j = -55C
89
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2
3
4
V
T
j = 150C
1.2
-
V
T
j = -55C
-
6
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 3 A
-
57
90
m
resistance
T
j = 150C
-
216
m
I
GSS
Gate source leakage current V
GS = ±10 V; VDS = 0 V
-
10
100
nA
I
DSS
Zero gate voltage drain
V
DS = 100 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 150C
-
500
A
Q
g(tot)
Total gate charge
I
D = 6 A; VDD = 80 V; VGS = 10 V
-
21
-
nC
Q
gs
Gate-source charge
-
2.5
-
nC
Q
gd
Gate-drain (Miller) charge
-
8.2
-
nC
t
d on
Turn-on delay time
V
DD = 50 V; RD = 8.2 ;-
6
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5.6
-15
-
ns
t
d off
Turn-off delay time
Resistive load
-
20
-
ns
t
f
Turn-off fall time
-
10
-
ns
L
d
Internal drain inductance
Measured tab to centre of die
-
2.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
633
-
pF
C
oss
Output capacitance
-
103
-
pF
C
rss
Feedback capacitance
-
61
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
T
sp =
25 C
-
5.5
A
(body diode)
I
SM
Pulsed source current (body
-
26
A
diode)
V
SD
Diode forward voltage
I
F = 6 A; VGS = 0 V
-
0.8
1.2
V
t
rr
Reverse recovery time
I
F = 6 A; -dIF/dt = 100 A/s;
-
55
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 25 V
-
135
-
nC
August 1999
2
Rev 1.000
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