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參數(shù)資料
| 型號： | 934055819118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 134K |
| 代理商： | 934055819118 |
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN010-55D
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 74 A;
-
264
mJ
energy
t
p = 100 s; Tj prior to avalanche = 25C;
V
DD ≤ 25 V; RGS = 50 ; VGS = 5 V
I
AS
Non-repetitive avalanche
-
75
A
current
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
1.2
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT428 package, pcb mounted, minimum
-
50
-
K/W
to ambient
footprint
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
V
voltage
T
j = -55C
42
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
1.5
2
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
7.4
10.5
m
resistance
V
GS = 5 V; ID = 25 A
-
8.6
12
m
V
GS = 4.5 V; ID = 25 A
-
9.1
13
m
V
GS = 5 V; ID = 25 A; Tj = 175C
-
25
m
I
GSS
Gate source leakage current V
GS = ±10 V; VDS = 0 V
-
0.02
100
nA
I
DSS
Zero gate voltage drain
V
DS = 25 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 175C
-
500
A
Q
g(tot)
Total gate charge
I
D = 75 A; VDD = 44 V; VGS = 5 V
-
55
-
nC
Q
gs
Gate-source charge
-
13
-
nC
Q
gd
Gate-drain (Miller) charge
-
28
-
nC
t
d on
Turn-on delay time
V
DD = 30 V; RD = 1.2 ;
-
19
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 10
-
114
-
ns
t
d off
Turn-off delay time
Resistive load
-
250
-
ns
t
f
Turn-off fall time
-
216
-
ns
L
d
Internal drain inductance
Measured tab to centre of die
-
3.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 20 V; f = 1 MHz
-
3300
-
pF
C
oss
Output capacitance
-
560
-
pF
C
rss
Feedback capacitance
-
370
-
pF
October 1999
2
Rev 1.200
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