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參數(shù)資料
| 型號： | 934055812127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 10.5 A, 30 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 934055812127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHB11N03LT, PHD11N03LT
Logic level FET
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tAV);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0123456789
10
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 10A
Tj = 25 C
VDD = 15 V
0.1
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
September 1999
6
Rev 1.000
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