參數(shù)資料
型號(hào): 934055534127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 17 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 5/7頁(yè)
文件大小: 97K
代理商: 934055534127
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF530N
Fig.13. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.14. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tAV);
unclamped inductive load
0
2
4
6
8
10
12
14
16
18
20
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
0.1
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
August 1999
5
Rev 1.100
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