參數(shù)資料
型號(hào)： 934055534127
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： 17 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 97K
代理商： 934055534127
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF530N
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
1.9
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT78 package, in free air
-
60
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
100
-
V
voltage
T
j = -55C
89
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2
3
4
V
T
j = 175C
1
-
V
T
j = -55C
-
6
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 9 A
-
80
110
m
resistance
T
j = 175C
-
275
m
g
fs
Forward transconductance
V
DS = 25 V; ID = 9 A
6.4
11
-
S
I
GSS
Gate source leakage current V
GS = ± 20 V; VDS = 0 V
-
10
100
nA
I
DSS
Zero gate voltage drain
V
DS = 100 V; VGS = 0 V
-
0.05
10
A
current
V
DS = 80 V; VGS = 0 V; Tj = 175C
-
250
A
Q
g(tot)
Total gate charge
I
D = 9 A; VDD = 80 V; VGS = 10 V
-
40
nC
Q
gs
Gate-source charge
-
5.6
nC
Q
gd
Gate-drain (Miller) charge
-
19
nC
t
d on
Turn-on delay time
V
DD = 50 V; RD = 2.7 ;-
6
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5.6
-36
-
ns
t
d off
Turn-off delay time
Resistive load
-
18
-
ns
t
f
Turn-off fall time
-
12
-
ns
L
d
Internal drain inductance
Measured tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
(SOT78 package only)
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
633
-
pF
C
oss
Output capacitance
-
103
-
pF
C
rss
Feedback capacitance
-
61
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
-
17
A
(body diode)
I
SM
Pulsed source current (body
-
68
A
diode)
V
SD
Diode forward voltage
I
F = 17 A; VGS = 0 V
-
0.92
1.2
V
t
rr
Reverse recovery time
I
F = 17 A; -dIF/dt = 100 A/s;
-
55
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 25 V
-
135
-
nC
August 1999
2
Rev 1.100
相關(guān)PDF資料
PDF描述
05W36 PT06E SERIES (MS3116) ENVIRONMENTAL-RESISTANT STRAIGHT PLUGS, STRAIGHT BODY STYLE, SOLDER TERMINATION, 16 SHELL SIZE, 16-8 INSERT ARRANGEMENT, PLUG GENDER, 8 CONTACTS
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