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參數(shù)資料
| 型號(hào)： | 934055514115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 1.3 A BUF OR INV BASED PRPHL DRVR, PDSO4 |
| 封裝： | PLASTIC, SC-73, SOT-223, 4 PIN |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 934055514115 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK127-50DL
Logic level TOPFET
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when one of the overload thresholds is exceeded.
It remains latched off until reset by the input.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Overload protection
-40C
≤ T
j ≤ 150C
I
D
Drain current limiting
V
IS = 5 V
0.8
1.3
1.7
A
V
IS = 4.5 V
0.7
-
A
V
IS = 4 V to 5.5 V
0.6
-
1.8
A
Short circuit load protection
V
IS = 5 V
P
D(TO)
Overload power threshold
for protection to operate
-
17
-
W
T
DSC
Characteristic time
which determines trip time
1
-
1.6
-
ms
Overtemperature protection
from I
D ≥ 280 mA or VDS ≥ 100 mV
T
j(TO)
Threshold junction temperature V
IS = 4 V to 5.5 V
150
165
-
C
SWITCHING CHARACTERISTICS
T
a = 25C; resistive load RL = 50 ; adjust VDD to obtain ID = 250 mA; refer to test circuit and waveforms
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
Turn-on delay time
V
IS: 0 V 5 V
-
5
12
s
t
r
Rise time
-
11
30
s
t
d off
Turn-off delay time
V
IS: 5 V 0 V
-
25
65
s
t
f
Fall time
-
14
35
s
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
S
Continuous forward current
T
mb ≤ 25 C; VIS = 0 V
-
2
A
REVERSE DIODE CHARACTERISTICS
Limits are for -40C
≤ T
mb ≤ 150C; typicals are for Tmb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SDO
Forward voltage
I
S = 2 A; VIS = 0 V; tp = 300 s
-
0.83
1.1
V
t
rr
Reverse recovery time
not applicable
2
--
1 Trip time t
d sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / [ PD / PD(TO) - 1 ].
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
October 2001
4
Rev 1.011
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