參數(shù)資料
型號: 934055495115
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 5 A, 40 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SMD, SC-73, 4 PIN
文件頁數(shù): 8/12頁
文件大?。?/td> 73K
代理商: 934055495115
2001 Nov 14
5
Philips Semiconductors
Product specication
40 V low VCEsat NPN transistor
PBSS4540Z
handbook, halfpage
0
1000
200
400
600
800
MLD683
10
1
IC (mA)
hFE
102
103
104
(1)
(3)
(2)
Fig.2
DC current gain as a function of collector
current; typical values.
VCE =2V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1200
1000
400
600
200
800
MLD684
101
1
IC (mA)
VBE
(mV)
10
102
103
104
(3)
(2)
(1)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
VCE =2V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
102
103
10
101
110
IC (mA)
VCEsat
(mV)
102
103
104
1
MLD685
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
104
103
102
10
1
MHC107
101
10
IC (mA)
1
VCEsat
(mV)
102
103
104
(2)
(1)
(3)
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
Tamb =25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
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