參數(shù)資料
型號: 934055495115
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 5 A, 40 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SMD, SC-73, 4 PIN
文件頁數(shù): 7/12頁
文件大?。?/td> 73K
代理商: 934055495115
2001 Nov 14
4
Philips Semiconductors
Product specication
40 V low VCEsat NPN transistor
PBSS4540Z
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 30 V; IE =0
100
nA
VCB = 30 V; IE = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0
100
nA
hFE
DC current gain
VCE =2V; IC = 500 mA
300
500
VCE =2V; IC = 1 A; note 1
300
500
VCE =2V; IC = 2 A; note 1
250
450
VCE =2V; IC = 5 A; note 1
100
300
VCEsat
collector-emitter saturation voltage
IC = 500 mA; IB =5mA
50
90
mV
IC = 1 A; IB =10mA
75
120
mV
IC = 2 A; IB = 200 mA
90
150
mV
IC = 5 A; IB = 500 mA
210
355
mV
RCEsat
equivalent on-resistance
IC = 5 A; IB = 500 mA; note 1
42
71
m
VBEsat
base-emitter saturation voltage
IC = 5 A; IB = 500 mA
1.1
1.3
V
VBEon
base-emitter turn-on voltage
VCE =2V; IC =2 A
0.8
1.1
V
fT
transition frequency
IC = 100 mA; VCE =10V;
f = 100 MHz
70
130
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie =0;
f = 1 MHz
60
75
pF
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