參數(shù)資料
型號: 934055447127
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 59K
代理商: 934055447127
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ106A
STATIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES,ICBO
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
0.2
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
0.5
mA
T
j = 125 C
I
CEO
Collector cut-off current
V
CEO = VCEOMmax (400V)
-
0.1
mA
I
EBO
Emitter cut-off current
V
EB = 9 V; IC = 0 A
-
1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10 mA;
400
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 6.0 A;IB = 1.2 A
-
0.4
1.0
V
BEsat
Base-emitter saturation voltage
I
C = 6.0 A;IB = 1.2 A
-
1.0
1.5
V
h
FE
DC current gain
I
C = 5 mA; VCE = 5 V
10
17
32
h
FE
I
C = 500 mA; VCE = 5 V
14
21
33
h
FEsat
I
C = 6.0 A; VCE = 5 V
8
11
15
DYNAMIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 5 A; IBon = -IBoff = 1 A;
R
L = 75 ohms; VBB2 = 4 V;
t
on
Turn-on time
0.56
0.75
s
t
s
Turn-off storage time
2.2
3.3
s
t
f
Turn-off fall time
260
350
ns
Switching times (inductive load)
I
Con = 5 A; IBon = 1 A; LB = 1 H;
-V
BB = 5 V
t
s
Turn-off storage time
1.35
1.60
s
t
f
Turn-off fall time
20
50
ns
Switching times (inductive load)
I
Con = 5A; IBon = 1 A; LB = 1 H;
-V
BB = 5 V; Tj = 100 C
t
s
Turn-off storage time
-
3.2
s
t
f
Turn-off fall time
-
100
ns
1 Measured with half sine-wave voltage (curve tracer).
March 1999
2
Rev 2.000
相關(guān)PDF資料
PDF描述
934055449112 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
05W2 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:26; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
934055451118 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
934055453127 6 A, 525 V, NPN, Si, POWER TRANSISTOR, TO-220AB
934055495115 5 A, 40 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
934055512115 制造商:NXP Semiconductors 功能描述:Diode PIN Attenuator/Switch 175V 2-Pin SOD-523 T/R
934055762127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube
934055788118 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R
934056255127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube
934056947115 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R