參數(shù)資料
型號: 934055423127
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 69K
代理商: 934055423127
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13005
STATIC CHARACTERISTICS
T
mb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CEV
Collector cut-off current
1
V
BE(off) = -1.5V; VCE = VCESMmax
-
1.0
mA
I
CEV
V
BE(off) = -1.5V; VCE = VCESMmax;
-
5.0
mA
T
j = 100C
I
EBO
Emitter cut-off current
V
EB = 9V; IC = 0A
-
1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0A; IC = 10mA
400
-
V
CEsat
Collector-emitter saturation voltage
I
C = 1.0A; IB = 0.2A
-
0.1
0.5
V
CEsat
I
C = 2.0A; IB = 0.5A
-
0.2
0.6
V
CEsat
I
C = 4.0A; IB = 1.0A
-
0.3
1.0
V
BEsat
Base-emitter saturation voltage
I
C = 1.0A; IB = 0.2A
-
0.85
1.2
V
BEsat
I
C = 2.0A; IB = 0.5A
-
0.92
1.6
V
h
FE
DC current gain
I
C = 1.0A; VCE = 5V
10
20
60
h
FEsat
I
C = 2.0A; VCE = 5V
8
17
40
DYNAMIC CHARACTERISTICS
T
mb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 2.0A; IBon = -IBoff = 0.4A;
R
L = 75; VCC = 250V
t
s
Turn-off storage time
2.7
4
s
t
f
Turn-off fall time
0.3
0.9
s
Switching times (inductive load)
I
Con = 2.0A; IBon = 0.4A; LB = 1H;
-V
BE(off) = 5V
t
s
Turn-off storage time
1.2
2
s
t
f
Turn-off fall time
0.1
0.5
s
Switching times (inductive load)
I
Con = 2.0A; IBon = 0.4A; LB = 1H;
-V
BE(off) = 5V; Tj = 100C
t
s
Turn-off storage time
1.4
4
s
t
f
Turn-off fall time
0.16
0.9
s
1 Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000
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