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參數(shù)資料
| 型號： | 934055125115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-89, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 49K |
| 代理商： | 934055125115 |
1999 Apr 20
4
Philips Semiconductors
Preliminary specication
PNP resistor-equipped transistor
PDTA123JEF
Fig.3
DC current gain as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
103
102
10
1
MDA920
101
1
(3)
10
IC (mA)
hFE
102
(1)
(2)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
10
102
103
MDA919
101
102
1
10
(2)
(3)
IC (mA)
VCEsat
(mV)
(1)
Fig.5
Input-off voltage as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
102
103
104
MDA922
102
101
1
IC (mA)
Vi(off)
(mV)
10
(3)
(2)
(1)
Fig.6
Input-on voltage as a function of collector
current; typical values.
VCE = 0.3 V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
102
103
104
MDA921
101
102
1
10
IC (mA)
Vi(on)
(mV)
(2)
(3)
(1)
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