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參數(shù)資料
| 型號(hào)： | 934055125115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-89, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | 934055125115 |
1999 Apr 20
3
Philips Semiconductors
Preliminary specication
PNP resistor-equipped transistor
PDTA123JEF
THERMAL CHARACTERISTICS
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 50 V
100
nA
ICEO
collector cut-off current
IB = 0; VCE = 30 V
1
A
IB = 0; VCE = 30 V; Tj = 150 °C
50
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
180
A
hFE
DC current gain
IC = 10 mA; VCE = 5 V
100
VCEsat
collector-emitter saturation voltage
IC = 5 mA; IB = 0.25 mA
100
mV
Vi(off)
input-off voltage
IC = 100 A; VCE = 5V
0.6
0.5
V
Vi(on)
input-on voltage
IC = 5 mA; VCE = 0.3 V
1.1
0.75
V
R1
input resistor
1.54
2.2
2.86
k
resistor ratio
17
21
26
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
3pF
R2
R1
--------
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