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參數(shù)資料
| 型號： | 934055075127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 44K |
| 代理商： | 934055075127 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AZ
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
2.0
mA
T
j = 125 C
BV
EBO
Emitter-base breakdown voltage
I
B = 1 mA
7.5
13.5
-
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
800
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 3.0 A; IB = 0.75 A
-
3.0
V
BEsat
Base-emitter saturation voltage
I
C = 3.0 A; IB = 0.75 A
0.8
0.89
0.98
V
h
FE
DC current gain
I
C = 0.5 A; VCE = 5 V
-
10
-
h
FE
I
C = 3 A; VCE = 5 V
4.2
5.5
7.3
DYNAMIC CHARACTERISTICS
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (16kHz line
I
Csat = 3.0 A; IB1 = 0.6 A; (IB2 = -1.5 A)
deflection circuit)
t
s
Turn-off storage time
3.7
4.6
s
t
f
Turn-off fall time
300
450
ns
Fig.1. Test circuit for V
CEOsust.
Fig.2. Oscilloscope display for V
CEOsust.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
2 Measured with half sine-wave voltage (curve tracer).
July 1999
2
Rev 1.000
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