參數(shù)資料
型號(hào): 934055075127
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 5 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, FULL PACK-3
文件頁數(shù): 1/6頁
文件大?。?/td> 44K
代理商: 934055075127
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AZ
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
8
A
P
tot
Total power dissipation
T
hs ≤ 25 C
-
32
W
V
CEsat
Collector-emitter saturation voltage
I
C = 3 A; IB = 0.75 A
-
3.0
V
I
Csat
Collector saturation current
f = 16 kHz
3.0
-
A
t
f
Fall time
I
Csat = 3.0 A;f = 16 kHz
300
450
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
8
A
I
B
Base current (DC)
-
3
A
I
BM
Base current peak value
-
5
A
-I
BM
Reverse base current peak value
1
-4
A
P
tot
Total power dissipation
T
hs
25 C
-
32
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
3.9
K/W
R
th j-a
Junction to ambient
in free air
55
-
K/W
12 3
case
b
c
e
1 Turn-off current.
July 1999
1
Rev 1.000
相關(guān)PDF資料
PDF描述
934055076127 5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AB
934055077127 5 A, 800 V, NPN, Si, POWER TRANSISTOR
934055078127 5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
05NH46 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; No. of Contacts:3; Connector Shell Size:8; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
934055079127 5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
934055092127 制造商:NXP Semiconductors 功能描述:H-OUT #7460
934055512115 制造商:NXP Semiconductors 功能描述:Diode PIN Attenuator/Switch 175V 2-Pin SOD-523 T/R
934055762127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube
934055788118 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R
934056255127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube