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參數(shù)資料
| 型號： | 934054965118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 30 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 934054965118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP45N03LT, PHB45N03LT, PHD45N03LT
Logic level FET
Fig.5. Typical output characteristics
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
I
D = f(VGS)
Fig.8. Typical transconductance
g
fs = f(ID)
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj)
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
02
4
6
8
10
0
10
20
30
40
50
60
70
80
PHP45N03LT
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
VGS = 2.5 V
3 V
3.5 V
4 V
4.5 V
5 V
10 V
15 V
Tj = 25 C
0
1020
3040
50
0
5
10
15
20
25
30
PHP45N03LT
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
175 C
VDS = 25 V
0
102030
40506070
80
0
0.01
0.02
0.03
0.04
0.05
0.06
PHP45N03LT
ID, Drain current (Amps)
Drain-Source on resistance, RDS(on) (Ohms)
VGS = 15 V
10 V
3 V
3.5 V
4 V
4.5 V
5 V
Tj = 25 C
-100
0
100
200
0
0.5
1
1.5
2
30V TrenchMOS
Tj / C
a
150
50
-50
0123
456
0
10
20
30
40
50
PHP45N03LT
Gate-source voltage, VGS (V)
Drain current, ID (A)
Tj = 25 C
175 C
VDS = 25 V
BUK959-60
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
November 1998
4
Rev 1.500
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