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參數(shù)資料
| 型號： | 934054965118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 30 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 934054965118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP45N03LT, PHB45N03LT, PHD45N03LT
Logic level FET
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
1.75
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT78 package, in free air
-
60
-
K/W
to ambient
SOT404 and SOT428 packages, pcb
-
50
-
K/W
mounted, minimum footprint
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
30
-
V
voltage
T
j = -55C
27
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
1.5
2
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
16
21
m
resistance
V
GS = 5 V; ID = 25 A
-
20
24
m
V
GS = 5 V; ID = 25 A; Tj = 175C
-
45
m
g
fs
Forward transconductance
V
DS = 25 V; ID = 25 A
8
27
-
S
I
DSS
Zero gate voltage drain
V
DS = 30 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 175C
-
500
A
I
GSS
Gate source leakage current V
GS = ±5 V; VDS = 0 V
-
10
100
nA
Q
g(tot)
Total gate charge
I
D = 20 A; VDD = 24 V; VGS = 10 V
-
40
-
nC
Q
gs
Gate-source charge
-
7
-
nC
Q
gd
Gate-drain (Miller) charge
-
10
-
nC
t
d on
Turn-on delay time
V
DD = 15 V; ID = 25 A;
-
10
20
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5
-50
75
ns
t
d off
Turn-off delay time
Resistive load
-
50
75
ns
t
f
Turn-off fall time
-
30
45
ns
L
d
Internal drain inductance
Measured tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
(SOT78 package only)
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
1050
-
pF
C
oss
Output capacitance
-
270
-
pF
C
rss
Feedback capacitance
-
140
-
pF
November 1998
2
Rev 1.500
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