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參數(shù)資料
| 型號(hào)： | 934054906135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2.3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封裝： | PLASTIC, SMD, SMA, PMOS, 2 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 934054906135 |
1998 Nov 25
3
Philips Semiconductors
Product specication
Fast soft-recovery rectier
BYG85B
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 m, see Fig.11.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 m, see Fig.11.
For more information please refer to the
‘General Part of associated Handbook’.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 2 A; Tj =Tj max; see Fig.8
0.78
V
IF = 2 A; see Fig.8
0.98
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
120
V
IR
reverse current
VR =VRRMmax; see Fig.9
5
A
VR =VRRMmax; Tj = 165 °C;
see Fig.9
150
A
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.13
12.5
ns
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.10
110
pF
maximum slope of reverse
recovery current
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = 1A/s;
see Fig.12
2A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
dI
R
dt
--------
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